SiO2-TiO2 interfaces studied by ellipsometry and x-ray photoemission spectroscopy

被引：30

作者：

Gallas, B ^{[1
]}

Brunet-Bruneau, A ^{[1
]}

Fisson, S ^{[1
]}

Vuye, G ^{[1
]}

Rivory, J ^{[1
]}

机构：

[1] Univ Paris 06, Lab Opt Solides, CNRS, UMR 7601, F-75252 Paris 05, France

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.1494843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an in situ study of the formation of the interfaces between TiO2 and SiO2 evaporated thin films using spectroscopic ellipsometry and x-ray photoemission spectroscopy (XPS). The growth of TiO2 on SiO2 was studied previously, but the reverse case has not received much attention up to now. In this article, we show that a common description is valid for both interfaces, which are formed by crosslinking Ti-O-Si bonds. We show also that the growth of TiO2 on SiO2 begins with an amorphous interface layer even when growth occurs at 400 degreesC. The interface is sharp, a few angstroms, as determined by angular XPS; when SiO2 grows on TiO2, the interface is thicker, about 10 A. Roughness and interdiffusion play roles in interface formation and their role will be discussed. (C) 2002 American Institute of Physics.

引用

页码：1922 / 1928

页数：7