Device performance of an n-channel organic thin-film transistor with LiF/Al bilayer source and drain electrodes

被引：18

作者：

Hoshino, S ^{[1
]}

Nagamatsu, S ^{[1
]}

Chikamatsu, M ^{[1
]}

Misaki, M ^{[1
]}

Yoshida, Y ^{[1
]}

Tanigaki, N ^{[1
]}

Yase, K ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 7A期

关键词：

thin-film transistor (TFT); organic semiconductors; n-channel; contact resistance; Al electrode;

D O I：

10.1143/JJAP.41.L808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the device properties of a copper (II) perfluorophthalocyanine (F16CuPc)-based n-channel organic thin-film transistor (TFT) with source and drain electrodes consisting of an LiF/Al bilayer. We clarified that the LiF thin film intercalated between the F16CuPc and Al layers played a key role in the observed field-effect transistor characteristics of the TFT. We concluded that the contact resistance was effectively reduced by the LiF layer, providing protection against an unfavorable chemical reaction with Al and possible formation of n-doped regions in the vicinity of the LiF/Al electrodes of the F16CuPc layer.

引用

页码：L808 / L810

页数：3

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