A critical examination of room temperature ferromagnetism in transition metal-doped oxide semiconductors

被引：34

作者：

Jeong, YH ^{[1
]}

Han, SJ

Park, JH

Lee, YH

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Electron Spin Sci Ctr, Pohang 790784, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

spintronics; oxide semiconductor; magnetic semiconductor; X-ray magnetic circular dichroism;

D O I：

10.1016/j.jmmm.2003.12.782

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current situation with the transition metal-doped oxide semiconductors, TiO2 and ZnO, regarding room temperature ferromagnetism is critically examined. It is provisionally concluded that the apparent ferromagnetism found in some samples stems from secondary phases. There is an indication that the room temperature ferromagnetism may be achieved by adding additional Cu to Fe-doped ZnO. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1976 / 1980

页数：5

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