Anomalously large negative differential resistance due to Gamma-Chi resonances in type-I GaAs/AlAs superlattices

被引：5

作者：

Hosoda, M

Ohtani, N

Tominaga, K

Mimura, H

Watanabe, T

机构：

[1] ATR Optical and Radio Communications Research Laboratories, Kyoto 619-02, Hikaridai, Seika-cho, Soraku-gun

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.56.6432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An anomalously large negative differential resistance was found in the photocurrent versus reverse bias voltage characteristics (I-V curve) of a type-I GaAs/AlAs superlattice. The scattering and trapping of electrons between Gamma states in the GaAs quantum well and X states in the AlAs barrier strongly affect the electron transport, and establish many structures in the I-V curve.

引用

收藏

页码：6432 / 6435

页数：4

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