BLOCKING OF GAMMA-]X TRANSFER IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES DUE TO X-STATE BAND FILLING

被引：7

作者：

BLOM, PWM

SMIT, C

HAVERKORT, JEM

WOLTER, JH

机构：

[1] Department of Physics, Eindhoven University of Technology, 5600 MB Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an experimental study of the optical properties of a GaAs/AlAs short period superlattice (SPSL) by photoluminescence and time-resolved two-pulse correlation experiments. Our SPSL is designed in such a way that the lowest confined GAMMA state in the GaAs is only slight (30-50 meV) above the X states in the AlAs. Therefore the GAMMA-->X transfer due to LO-phonon emission or interface scattering is prohibited by X-band filming at high excitation densities and small excess energies, which allows us to measure a GAMMA-->X transfer time induced by LO-phonon absorption of 20 ps. By adjusting the laser energy, excitation density, and temperature we are able to transform the emission spectrum of the SPSL completely from a type-I into a type-II transition.

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页码：2393 / 2395

页数：3

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