800 MHz single-photon detection at 1550-nm using an InGaAs/InP avalanche photodiode operated with a sine wave gating

被引：164

作者：

Namekata, N. ^{[1
]}

Sasamori, S. ^{[1
]}

Inoue, S. ^{[1
]}

机构：

[1] Nihon Univ, Inst Quantum Sci, Chiyoda Ku, Tokyo 1018308, Japan

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 21期

关键词：

D O I：

10.1364/OE.14.010043

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Single-photon detection at 1550-nm with a high repetition rate was realized using an InGaAs/InP avalanche photodiode operated with a sine wave gating. Removing the AC noise due to the transferred gate signal using band elimination filters, we have discriminated the avalanche signal which is much smaller than that in the conventional gating, which results in the suppression of the afterpulsing. At the repetition frequency of 800MHz, the overall afterpulsing probability was 6.0% with the detection efficiency of 8.5% and the dark count probability of 9.2 x 10(-6). (c) 2006 Optical Society of America

引用

页码：10043 / 10049

页数：7

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