Si1-yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

Preparation of pseudomorphic Si1-yCy/Si(001) heterostructures using Si molecular beam epitaxy with C obtained from SiC sublimation in a high-temperature cell has been studied. Thick (approximate to 2000 Angstrom) homogenous Si1-yCy layers, y less than or equal to 1.5%, and Si1-yCy/Si multiple quantum well (MQW) structures, y less than or equal to 8%, have been prepared. There is a growth temperature dependent surface roughness accumulating during the growth sequence that can lead to reduction of C induced strain. Temperature modulation during growth has been used to suppress this effect. Near band gap photoluminescence is reported from Si1-yCy/Si MQW structures. (C) 1997 American Institute of Physics.