Photoluminescence of a pseudomorphic Si1-yCy/Si MQW structure under pressure

被引:9
作者
Liu, ZX
Goni, AR
Brunner, K
Eberl, K
Syassen, K
机构
[1] Max-Planck-Inst. Festkorperforschung, D-70569 Stuttgart
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1996年 / 198卷 / 01期
关键词
D O I
10.1002/pssb.2221980141
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have measured photoluminescence (PL) spectra of a pseudomorphic Si1-yCy/Si (y = 0.0045) multiple quantum well (MQW) structure under hydrostatic pressure (0 to 8 GPa) and at low temperatures (10 to 70 K). The MQW-related emission at energies below the Si band gap consists of bound and free exciton zero-phonon lines and related Si-Si TO phonon replicas. All MQW-related PL peaks shift to lower energy with increasing pressure. The dependence of PL-peak intensities and energies on excitation power density; temperature, and pressure are consistent with a type-I band alignment throughout the pressure range investigated. Furthermore, the total band offset aid tie activation energies involved in the decay of the free and bound exciton emission show only a very small change with pressure.
引用
收藏
页码:315 / 320
页数:6
相关论文
共 13 条
[1]   BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS [J].
BOUCAUD, P ;
FRANCIS, C ;
JULIEN, FH ;
LOURTIOZ, JM ;
BOUCHIER, D ;
BODNAR, S ;
LAMBERT, B ;
REGOLINI, JL .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :875-877
[2]   Near-band-edge photoluminescence from pseudomorphic Si1-gamma C gamma/Si quantum well structures [J].
Brunner, K ;
Eberl, K ;
Winter, W .
PHYSICAL REVIEW LETTERS, 1996, 76 (02) :303-306
[3]   THEORETICAL INVESTIGATION OF RANDOM SI-C ALLOYS [J].
DEMKOV, AA ;
SANKEY, OF .
PHYSICAL REVIEW B, 1993, 48 (04) :2207-2214
[4]   THE GROWTH AND CHARACTERIZATION OF SI1-YCY ALLOYS ON SI(001) SUBSTRATE [J].
EBERL, K ;
IYER, SS ;
TSANG, JC ;
GOORSKY, MS ;
LEGOUES, FK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :934-936
[5]   GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].
EBERL, K ;
IYER, SS ;
ZOLLNER, S ;
TSANG, JC ;
LEGOUES, FK .
APPLIED PHYSICS LETTERS, 1992, 60 (24) :3033-3035
[6]   SYNTHESIS OF SI1-YCY ALLOYS BY MOLECULAR-BEAM EPITAXY [J].
IYER, SS ;
EBERL, K ;
GOORSKY, MS ;
LEGOUES, FK ;
TSANG, JC ;
CARDONE, F .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :356-358
[7]   EFFECTS OF UNIAXIAL STRESS ON INDIRECT EXCITON SPECTRUM OF SILICON [J].
LAUDE, LD ;
POLLAK, FH ;
CARDONA, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2623-&
[8]  
Madelung O., 1982, LANDOLT BORNSTEIN, V17
[9]   DETERMINATION OF DEFORMATION POTENTIAL CONSTANTS FROM ELECTRON CYCLOTRON RESONANCE IN GERMANIUM AND SILICON [J].
MURASE, K ;
ENJOIJI, K ;
OTSUKA, E .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (05) :1248-&
[10]   SI1-X-YGEXCY GROWTH AND PROPERTIES OF THE TERNARY-SYSTEM [J].
POWELL, AR ;
EBERL, K ;
EK, BA ;
IYER, SS .
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :425-429