Micro-sensor coupling magnetostriction and magnetoresistive phenomena

被引：35

作者：

Duenas, T

Sehrbrock, A

Löhndorf, M

Ludwig, A

Wecker, J

Grünberg, P

Quandt, E

机构：

[1] CAESAR, D-53111 Bonn, Germany

[2] Siemens AG Corp Technol, D-91050 Erlangen, Germany

[3] Inst Festkorperforsch, Forschungszentrum Julich, D-52452 Julich, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 242卷

关键词：

sensors; magnetoresistance; magnetostriction; thin films; spin valve;

D O I：

10.1016/S0304-8853(01)00975-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Giant magnetoresistance or tunnel magnetoresistance (TMR) structures with magnetostrictive free layers are attractive approaches for the realization of novel strain sensors. It has been found that the strain response can he enhanced by using magnetostrictive materials such as Fe50Co50. First experiments have further revealed that the tunnel barrier of TMR Structures withstands a strain level of at least 0.1%. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1132 / 1135

页数：4

共 8 条

[1] Magnetostriction in spin valves [J].