Raman study of titanium oxide layers produced with plasma immersion ion implantation

被引：51

作者：

Mändl, S ^{[1
]}

Thorwarth, G ^{[1
]}

Schreck, M ^{[1
]}

Stritzker, B ^{[1
]}

Rauschenbach, B ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 125卷 / 1-3期

关键词：

elastic recoil detection; plasma immersion ion implantation; Raman spectroscopy; titanium oxide; X-ray diffraction;

D O I：

10.1016/S0257-8972(99)00559-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Raman spectroscopy was used to study thin titanium oxide (TiO2)layers obtained by oxygen plasma immersion ion implantation (PIII) at rather low temperatures between 265 and 550 degrees C. A pulse voltage of -30 kV and different pulse numbers between 5 x 10(5) and 4 x 10(6) were used. The phase composition was investigated with Raman spectroscopy, showing that rutile is present for all temperatures and doses used in this investigation. The results were corroborated with glancing angle X-ray diffraction (XRD). The grain size, as determined by scanning electron microscopy (SEM), changed from 40-100 to 10-30 nm when the temperature was decreased from 430 to 380 degrees C. The retained dose and the layer thickness were determined by elastic recoil detection (ERD), yielding an incident dose of 6 x 10(11) oxygen atoms per pulse and a maximum layer thickness beyond 100 nm. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：84 / 88

页数：5

共 16 条

[1] RAMAN-SPECTRA OF TITANIUM-DIOXIDE [J].