High performance CMOS operation of strained-SOI MOSFETs using thin film SiGe-on-insulator substrate

被引：36

作者：

Mizuno, T ^{[1
]}

Sugiyama, N ^{[1
]}

Tezuka, T ^{[1
]}

Numata, T ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] ASET, MIRAI Project, Saiwai Ku, Kawasaki, Kanagawa 212852, Japan

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：106 / 107

页数：2

共 7 条

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[3]

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[7]

TEZUKA T, 2000, SOLID STATE DEVICES, P472

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