Advanced SOI-MOSFETs with strained-Si channel for high speed CMOS - Electron/hole mobility enhancement

被引：49

作者：

Mizuno, T ^{[1
]}

Sugiyama, N ^{[1
]}

Satake, H ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852829

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：210 / 211

页数：2

相关论文

共 9 条

[1] SiGe-on-insulator substrate using SiGe alloy grown Si(001)
Ishikawa, Y
Shibata, N
Fukatsu, S
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (07) : 983 - 985
[2] Mizuno T., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P934, DOI 10.1109/IEDM.1999.824303
[3] ANALYSIS OF BURIED OXIDE LAYER FORMATION AND MECHANISM OF THREADING DISLOCATION GENERATION IN THE SUBSTOICHIOMETRIC OXYGEN DOSE REGION
NAKASHIMA, S
IZUMI, K
[J]. JOURNAL OF MATERIALS RESEARCH, 1993, 8 (03) : 523 - 534
[4] Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET's
Oberhuber, R
Zandler, G
Vogl, P
[J]. PHYSICAL REVIEW B, 1998, 58 (15): : 9941 - 9948
[5] OHBA R, 1997, SSDM, P158
[6] Rashed M, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P765, DOI 10.1109/IEDM.1995.499330
[7] SUGIYAMA N, 1999, INT JOINT C SI EP HE, pE3
[8] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION
TAKAGI, S
TORIUMI, A
IWASE, M
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2357 - 2362
[9] Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
Takagi, SI
Hoyt, JL
Welser, JJ
Gibbons, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1567 - 1577