SiGe-on-insulator substrate using SiGe alloy grown Si(001)

被引：48

作者：

Ishikawa, Y

Shibata, N

Fukatsu, S

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 1538902, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.124574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-energy oxygen ion (25 keV O+) implantation was performed on a pseudomorphic Si1-xGex/Si(001) of uniform composition in an attempt to create a SiGe-on-insulator (SiGe-OI) substrate using the separation-by-implanted-oxygen technique. Choosing a small Ge composition (< 0.3) was found to be essential to achieving a SiGe-OI geometry of structural integrity. (C) 1999 American Institute of Physics. [S0003-6951(99)04933-5].

引用

页码：983 / 985

页数：3

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