PREPARATION OF THIN SILICON-ON-INSULATOR FILMS BY LOW-ENERGY OXYGEN ION-IMPLANTATION

Silicon-on-insulator (SOI) structure have been formed by oxygen implantation with the ion energy of 15-30 keV in silicon wafers. The ion implantation conditions which produce the SOI structure have been investigated both by calculation and experiments. As-implanted layers were analyzed by Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thicknesses of the SOI layer and the buried amorphous SiOx layer are 48 and 61 nm, respectively, under the conditions at the O+ ion energy of 25 keV, with the dose of 2 x 10(17) ion/cm2, and at about 450-degrees-C. The SOI layers are homogeneous and have sharp Si/SiOx interfaces.