MODIFICATION OF A 100-MA-CLASS HIGH-CURRENT OXYGEN IMPLANTER AND ITS APPLICATION TO ULTRATHIN FILM MOSFET SIMOX

[1] REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 97 - 99

[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246

[3] END STATION DESIGN AND WAFER QUALITY-CONTROL FOR A HIGH-CURRENT OXYGEN IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 324 - 327

[4] SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION-IMPLANTATION [J]. VACUUM, 1979, 29 (11-1) : 439 - 442

[5] SIMOX TECHNOLOGY AND ITS APPLICATION TO CMOS LSIS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 845 - 861

[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[7] PROMOTION OF PRACTICAL SIMOX TECHNOLOGY BY THE DEVELOPMENT OF A 100 MA-CLASS HIGH-CURRENT OXYGEN IMPLANTER [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 775 - 777

[8] ACCELERATION COLUMN FOR A HIGH-CURRENT OXYGEN IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 321 - 323

[9] Malhi S. D. S., 1982, International Electron Devices Meeting. Technical Digest, P107

[10] A HIGH-CURRENT, HIGH-VOLTAGE OXYGEN ION IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 229 - 234

[1] REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 97 - 99

[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246

[3] END STATION DESIGN AND WAFER QUALITY-CONTROL FOR A HIGH-CURRENT OXYGEN IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 324 - 327

[4] SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION-IMPLANTATION [J]. VACUUM, 1979, 29 (11-1) : 439 - 442

[5] SIMOX TECHNOLOGY AND ITS APPLICATION TO CMOS LSIS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 845 - 861

[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[7] PROMOTION OF PRACTICAL SIMOX TECHNOLOGY BY THE DEVELOPMENT OF A 100 MA-CLASS HIGH-CURRENT OXYGEN IMPLANTER [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 775 - 777

[8] ACCELERATION COLUMN FOR A HIGH-CURRENT OXYGEN IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 321 - 323

[9] Malhi S. D. S., 1982, International Electron Devices Meeting. Technical Digest, P107

[10] A HIGH-CURRENT, HIGH-VOLTAGE OXYGEN ION IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 229 - 234