A HIGH-CURRENT, HIGH-VOLTAGE OXYGEN ION IMPLANTER

被引：41

作者：

RUFFELL, JP ^{[1
]}

DOUGLASHAMILTON, DH ^{[1
]}

KAIM, RE ^{[1
]}

IZUMI, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ELECT COMMUN LABS, ATSUGI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90833-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：229 / 234

页数：6

相关论文

共 8 条

[1] BROWN KL, TRANSPORT SLAC91 STA
[2] LAYER THICKNESSES IN OXYGEN IMPLANTATION OF SILICON
DOUGLASHAMILTON, DH
DOLAN, RP
FRIEDMAN, HE
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 158 - 162
[3] END STATION DESIGN AND WAFER QUALITY-CONTROL FOR A HIGH-CURRENT OXYGEN IMPLANTER
DOUGLASHAMILTON, DH
RUFFELL, JP
KAIM, RE
IZUMI, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 324 - 327
[4] DOUGLASHAMILTON DH, 1986, MATERIALS RES SOC
[5] SIMOX TECHNOLOGY AND ITS APPLICATION TO CMOS LSIS
IZUMI, K
OMURA, Y
SAKAI, T
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 845 - 861
[6] ACCELERATION COLUMN FOR A HIGH-CURRENT OXYGEN IMPLANTER
KAIM, RE
DOUGLASHAMILTON, DH
RUFFELL, JP
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 321 - 323
[7] HIGH-CURRENT DC ION-SOURCE DEVELOPMENT AT CRNL
SHUBALY, MR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (03) : 3065 - 3067
[8] HIGH-CURRENT DC ION-BEAMS
SHUBALY, MR
DEJONG, MS
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1399 - 1401