SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION-IMPLANTATION

被引：18

作者：

HEMMENT, PLF

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey

来源：

VACUUM | 1979年 / 29卷 / 11-1期

关键词：

D O I：

10.1016/S0042-207X(79)80893-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Data is presented which shows that both forward and back sputtering can be the cause of heavy metal surface contamination of samples during ion implantation. Rutherford backscattering is used to show that contamination levels can be in excess of 1 and 0.02% of the implanted dose for forward and back sputtering, respectively. It is suggested that ion implantation equipment using mechanical sample scanning is particularly susceptible to this cause of contamination. © 1979 Pergamon Press Ltd.

引用

页码：439 / 442

页数：4

共 12 条

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