FORMATION OF BURIED SIO2 LAYER BY OXYGEN IMPLANTED INTO SI/GE AND SI SI0.5GE0.5 SUBSTRATES

被引：10

作者：

TANG, YS

ZHANG, JP

HEMMENT, PLF

SEALY, BJ

LIU, HD

CASTLE, JE

NEWSTEAD, SM

POWELL, AR

WHALL, TE

PARKER, EHC

机构：

[1] UNIV SURREY,DEPT MAT SCI & ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.344542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of buried SiO2 layer by high-dose oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 heterostructures is studied by infrared transmission and x-ray photoelectron spectroscopy. The results show that the Ge in the implanted region has no influence on the bonding properties of oxygen, and there exists a critical annealing temperature of about 1250 °C for all the implanted oxygen to be bonded as SiO2.

引用

页码：7151 / 7153

页数：3

共 5 条

[1] NONPLANAR AND NONCONTINUOUS BURIED LAYERS OF SIO2 IN SILICON FORMED BY ION-BEAM SYNTHESIS
HEMMENT, PLF
REESON, KJ
ROBINSON, AK
KILNER, JA
CHATER, RJ
MARSH, CD
CHRISTENSEN, KN
DAVIS, JR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 766 - 769
[2] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION
HOMMA, Y
OSHIMA, M
HAYASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06): : 890 - 895
[3] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
IZUMI, K
DOKEN, M
ARIYOSHI, H
[J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594
[4] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
LUCOVSKY, G
RICHARD, PD
TSU, DV
LIN, SY
MARKUNAS, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 681 - 688
[5] Reeson K. J., 1988, Microelectronic Engineering, V8, P163, DOI 10.1016/0167-9317(88)90015-9

← 1 →