NONPLANAR AND NONCONTINUOUS BURIED LAYERS OF SIO2 IN SILICON FORMED BY ION-BEAM SYNTHESIS

被引：16

作者：

HEMMENT, PLF

REESON, KJ

ROBINSON, AK

KILNER, JA

CHATER, RJ

MARSH, CD

CHRISTENSEN, KN

DAVIS, JR

机构：

[1] UNIV OXFORD,OXFORD,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,LONDON SW7 2AZ,ENGLAND

[3] BRITISH TELECOM,RES LABS,MARTLESHAM HEATH,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90294-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：766 / 769

页数：4

相关论文

共 9 条

[1] THE EVOLUTION OF THE SI/SIO2 INTERFACE IN BURIED OXIDE LAYERS FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON
CHATER, RJ
KILNER, JA
HEMMENT, PLF
REESON, KJ
DAVIS, JR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 290 - 293
[2] COLINGE JP, 1988, MAR EUR SOI M MEYL
[3] DIELECTRICALLY ISOLATED SILICON-ON-INSULATOR ISLANDS BY MASKED OXYGEN IMPLANTATION
DAVIS, JR
ROBINSON, A
REESON, KJ
HEMMENT, PLF
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1419 - 1421
[4] NOVEL DIELECTRIC SILICON PLANAR STRUCTURES FORMED BY ION-BEAM SYNTHESIS
HEMMENT, PLF
REESON, KJ
KILNER, JA
CHATER, RJ
MARSH, C
BOOKER, GR
DAVIS, JR
CELLER, GK
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) : 129 - 133
[5] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207
[6] JAUSSAUD C, 1988, MAR EUR SOI M MEYL
[7] SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION
KILNER, JA
CHATER, RJ
HEMMENT, PLF
PEART, RF
MAYDELLONDRUSZ, EA
TAYLOR, MR
ARROWSMITH, RP
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 293 - 298
[8] ROBINSON AK, 1988, EUROPEAN SOI M MEYLA
[9] WEBB RA, COMMUNICATION