NOVEL DIELECTRIC SILICON PLANAR STRUCTURES FORMED BY ION-BEAM SYNTHESIS

被引：25

作者：

HEMMENT, PLF

REESON, KJ

KILNER, JA

CHATER, RJ

MARSH, C

BOOKER, GR

DAVIS, JR

CELLER, GK

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2AZ,ENGLAND

[2] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND

[3] BRITISH TELECOM RES LAB,IPSWICH,ENGLAND

[4] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90811-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：129 / 133

页数：5

共 17 条

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[5] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN [J].

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[6]

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[7]

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[9] SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION [J].

KILNER, JA ;

CHATER, RJ ;

HEMMENT, PLF ;

PEART, RF ;

MAYDELLONDRUSZ, EA ;

TAYLOR, MR ;

ARROWSMITH, RP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :293-298

[10]

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