FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN

被引：59

作者：

HEMMENT, PLF

MAYDELLONDRUSZ, E

STEPHENS, KG

BUTCHER, J

IOANNOU, D

ALDERMAN, J

机构：

[1] MIDDLESEX POLYTECH,LONDON N14 5PN,ENGLAND

[2] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90794-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：157 / 164

页数：8

共 10 条

[1]

ALDERMAN J, 1982, SEP EUR SOL STAT DEV

[2]

ARROWSMITH RP, COMMUNICATION

[3] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J].

BADAWI, MH ;

ANAND, KV .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) :1931-1942

[4]

BRACK K, 1974, LATTICE DEFECTS SEMI

[5]

DAS K, 1981, APR C MICR SEM MAT O

[6]

INUMI K, 1982, JUN EL MAT C COL

[7] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[8] CHARACTERISTICS OF MOSFETS FABRICATED IN SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

LAM, HW ;

PINIZZOTTO, RF ;

YUAN, HT ;

BELLAVANCE, DW .

ELECTRONICS LETTERS, 1981, 17 (10) :356-358

[9]

MORRIS JH, UNPUB

[10]

WILSON ML, UNPUB

← 1 →