SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION

被引：45

作者：

KILNER, JA

CHATER, RJ

HEMMENT, PLF

PEART, RF

MAYDELLONDRUSZ, EA

TAYLOR, MR

ARROWSMITH, RP

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2AZ,ENGLAND

[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

关键词：

D O I：

10.1016/0168-583X(85)90568-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：293 / 298

页数：6

共 14 条

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[3] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON
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[4] HEMMENT PLF, 1983, NUCL INSTR METH, V209, P695
[5] SIMS ANALYSIS OF SILICON INSULATOR STRUCTURES FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 573 - 578
[6] KILNER JA, UNPUB
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