共 17 条
- [1] FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 157 - 164
- [2] HEMMENT PLF, 1982, P INT C ION BEAM MOD
- [3] HEMMENT PLF, 1983, UNPUB VACUUM
- [4] REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3202 - 3205
- [5] MAGEE CW, 1982, SECONDARY ION MASS S, V3, P172