SIMS ANALYSIS OF SILICON INSULATOR STRUCTURES FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON

被引:20
作者
KILNER, JA [1 ]
LITTLEWOOD, SD [1 ]
HEMMENT, PLF [1 ]
MAYDELLONDRUSZ, E [1 ]
STEPHENS, KG [1 ]
机构
[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期
关键词
D O I
10.1016/0167-5087(83)91045-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:573 / 578
页数:6
相关论文
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