THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI

被引：19

作者：

MAGEE, TJ

LEUNG, C

KAWAYOSHI, H

ORMOND, R

FURMAN, BK

EVANS, CA

DAY, DS

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

[2] AVANTEK INC,SANTA CLARA,CA 95051

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 415

页数：3

共 8 条

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APPLIED PHYSICS LETTERS, 1980, 36 (04) :279-281

[2] REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON [J].

KOYAMA, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3202-3205

[3] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :891-893

[4]

MAGEE TJ, 1981, APPL PHYS LETT, V39

[5]

MAGEE TJ, 1981, J APPL PHYS, V52

[6]

MAGEE TJ, 1980, ONR N00014800071 CON

[7] ELECTRON-MICROSCOPY STUDY OF DEFECT STRUCTURES IN RECRYSTALLIZED AMORPHOUS LAYERS OF SELF-ION-IRRADIATED (111) SILICON [J].

RECHTIN, MD ;

PRONKO, PP ;

FOTI, G ;

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (05) :605-620

[8]

1977, ANN BOOK ASTM STA 43, pF121

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