GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI

被引：23

作者：

MAGEE, TJ ^{[1
]}

LEUNG, C ^{[1
]}

KAWAYOSHI, H ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：891 / 893

页数：3

相关论文

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[9] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI
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[10] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING
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