PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON

被引：71

作者：

SHIMURA, F

TSUYA, H

KAWAMURA, T

机构：

来源：

关键词：

D O I：

10.1063/1.91739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：483 / 486

页数：4

共 12 条

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[10] SURFACE-MICRO-DEFECT AND INNER-MICRO-DEFECT IN ANNEALED SILICON-WAFER CONTAINING OXYGEN
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