SURFACE-MICRO-DEFECT AND INNER-MICRO-DEFECT IN ANNEALED SILICON-WAFER CONTAINING OXYGEN

[1] ON GENERATION OF DISLOCATIONS AT MISFITTING PARTICLES IN A DUCTILE MATRIX [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 1009 - &

[2] BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100

[3] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[4] FOLL H, 1977, SEMICONDUCTOR SILICO, P740

[5] HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL-GROWTH RELATIONSHIP TO EPITAXIAL STACKING-FAULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1151 - 1155

[6] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75

[7] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3813 - 3825

[8] OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5279 - 5288

[9] ROZGONYI GA, 1977, APPL PHYS LETT, V31, P343, DOI 10.1063/1.89693

[10] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 747 - 749

[1] ON GENERATION OF DISLOCATIONS AT MISFITTING PARTICLES IN A DUCTILE MATRIX [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 1009 - &

[2] BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100

[3] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[4] FOLL H, 1977, SEMICONDUCTOR SILICO, P740

[5] HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL-GROWTH RELATIONSHIP TO EPITAXIAL STACKING-FAULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1151 - 1155

[6] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75

[7] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3813 - 3825

[8] OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5279 - 5288

[9] ROZGONYI GA, 1977, APPL PHYS LETT, V31, P343, DOI 10.1063/1.89693

[10] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 747 - 749