LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING

[1] HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8240 - 8243

[2] SUPPRESSION OF OXIDATION-STACKING-FAULT GENERATION BY PRE-ANNEALING IN N2 ATMOSPHERE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 1 - 3

[3] PATRICK WJ, 1970, SILICON DEVICE PROCE, P442

[4] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 577 - +

[5] SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY [J]. MICROELECTRONICS RELIABILITY, 1970, 9 (05) : 397 - &

[6] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176

[7] VARKER CN, 1973, SEMICONDUCTOR SILICO, P670

[8] YANG KH, 1978, PHYS STATUS SOLIDI A, V50, P221, DOI 10.1002/pssa.2210500126

[9] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

[1] HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8240 - 8243

[2] SUPPRESSION OF OXIDATION-STACKING-FAULT GENERATION BY PRE-ANNEALING IN N2 ATMOSPHERE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 1 - 3

[3] PATRICK WJ, 1970, SILICON DEVICE PROCE, P442

[4] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 577 - +

[5] SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY [J]. MICROELECTRONICS RELIABILITY, 1970, 9 (05) : 397 - &

[6] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176

[7] VARKER CN, 1973, SEMICONDUCTOR SILICO, P670

[8] YANG KH, 1978, PHYS STATUS SOLIDI A, V50, P221, DOI 10.1002/pssa.2210500126

[9] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30