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SUPPRESSION OF OXIDATION-STACKING-FAULT GENERATION BY PRE-ANNEALING IN N2 ATMOSPHERE
被引:28
作者
:
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
KISHINO, S
[
1
]
ISOMAE, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
ISOMAE, S
[
1
]
TAMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
TAMURA, M
[
1
]
MAKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
MAKI, M
[
1
]
机构
:
[1]
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
来源
:
APPLIED PHYSICS LETTERS
|
1978年
/ 32卷
/ 01期
关键词
:
D O I
:
10.1063/1.89831
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1 / 3
页数:3
相关论文
共 18 条
[1]
EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES
DECLERCK, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
DECLERCK, GJ
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
HATTORI, T
MAY, GA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
MAY, GA
BEAUDOUIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
BEAUDOUIN, J
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
MEINDL, JD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: 436
-
439
[2]
DEKOCK AJR, 1973, PHILIPS RES REP S
[3]
STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS
DRUM, CM
论文数:
0
引用数:
0
h-index:
0
DRUM, CM
VANGELDE.W
论文数:
0
引用数:
0
h-index:
0
VANGELDE.W
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(11)
: 4465
-
&
[4]
FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054
[5]
OXYGEN CONTENT OF SILICON SINGLE CRYSTALS
KAISER, W
论文数:
0
引用数:
0
h-index:
0
KAISER, W
KECK, PH
论文数:
0
引用数:
0
h-index:
0
KECK, PH
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(08)
: 882
-
887
[6]
KISHINO S, UNPUBLISHED
[7]
FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS
KOCK, AJRD
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOCK, AJRD
ROKSNOER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ROKSNOER, PJ
BOONEN, PGT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
BOONEN, PGT
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
28
(01)
: 125
-
137
[8]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[9]
CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN
MAHER, DM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
MAHER, DM
STAUDINGER, A
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STAUDINGER, A
PATEL, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
PATEL, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(09)
: 3813
-
3825
[10]
GENERATION OF STACKING-FAULTS AND PRISMATIC DISLOCATION LOOPS IN DEVICE-PROCESSED SILICON WAFERS
PRUSSIN, S
论文数:
0
引用数:
0
h-index:
0
PRUSSIN, S
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(06)
: 2850
-
&
←
1
2
→
共 18 条
[1]
EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES
DECLERCK, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
DECLERCK, GJ
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
HATTORI, T
MAY, GA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
MAY, GA
BEAUDOUIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
BEAUDOUIN, J
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
MEINDL, JD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: 436
-
439
[2]
DEKOCK AJR, 1973, PHILIPS RES REP S
[3]
STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS
DRUM, CM
论文数:
0
引用数:
0
h-index:
0
DRUM, CM
VANGELDE.W
论文数:
0
引用数:
0
h-index:
0
VANGELDE.W
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(11)
: 4465
-
&
[4]
FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054
[5]
OXYGEN CONTENT OF SILICON SINGLE CRYSTALS
KAISER, W
论文数:
0
引用数:
0
h-index:
0
KAISER, W
KECK, PH
论文数:
0
引用数:
0
h-index:
0
KECK, PH
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(08)
: 882
-
887
[6]
KISHINO S, UNPUBLISHED
[7]
FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS
KOCK, AJRD
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOCK, AJRD
ROKSNOER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ROKSNOER, PJ
BOONEN, PGT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
BOONEN, PGT
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
28
(01)
: 125
-
137
[8]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[9]
CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN
MAHER, DM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
MAHER, DM
STAUDINGER, A
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STAUDINGER, A
PATEL, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
PATEL, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(09)
: 3813
-
3825
[10]
GENERATION OF STACKING-FAULTS AND PRISMATIC DISLOCATION LOOPS IN DEVICE-PROCESSED SILICON WAFERS
PRUSSIN, S
论文数:
0
引用数:
0
h-index:
0
PRUSSIN, S
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(06)
: 2850
-
&
←
1
2
→