FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS

被引：32

作者：

KOCK, AJRD ^{[1
]}

ROKSNOER, PJ ^{[1
]}

BOONEN, PGT ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1016/0022-0248(75)90034-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：125 / 137

页数：13

共 63 条

[1] ABE T, 1973, SEMICONDUCTOR SILICO, P95
[2] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT
ALDRED, PJE
HART, M
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) : 223 - +
[3] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON
BAKER, JA
TUCKER, TN
MOYER, NE
BUSCHERT, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &
[4] BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100
[5] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS
BEAN, AR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1211 - &
[6] ELASTIC STRAIN AND COLORATION PATTERN IN NATURAL QUARTZ CRYSTALS
BONSE, U
[J]. ZEITSCHRIFT FUR PHYSIK, 1965, 184 (01): : 71 - &
[7] BORRMANN G, 1962, DIRECT OBSERVATION I, P409
[8] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL
BURTON, JA
PRIM, RC
SLICHTER, WP
[J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1987 - 1991
[9] BURTSCHER J, 1973, SEMICONDUCTOR SILICO, P581
[10] Ciszek T. F., 1969, Semiconductor silicon, P156