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SUPPRESSION OF OXIDATION-STACKING-FAULT GENERATION BY PRE-ANNEALING IN N2 ATMOSPHERE
被引:28
作者
:
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
KISHINO, S
[
1
]
ISOMAE, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
ISOMAE, S
[
1
]
TAMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
TAMURA, M
[
1
]
MAKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
MAKI, M
[
1
]
机构
:
[1]
HITACHI LTD, CENT RES LAB, HITACHI, JAPAN
来源
:
APPLIED PHYSICS LETTERS
|
1978年
/ 32卷
/ 01期
关键词
:
D O I
:
10.1063/1.89831
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1 / 3
页数:3
相关论文
共 18 条
[11]
ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ROZGONYI, GA
PETROFF, PM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, PM
READ, MH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
READ, MH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(12)
: 1725
-
1729
[12]
DISLOCATION ETCH FOR (100) PLANES IN SILICON
SECCODARAGONA, F
论文数:
0
引用数:
0
h-index:
0
SECCODARAGONA, F
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(07)
: 948
-
+
[13]
SILICON WAFER ANNEALING EFFECT IN LOOP DEFECT GENERATION
SHIRAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELEC CO,CENT RES LABS,1753 NAKAHARA,KAWASAKI,JAPAN
NIPPON ELEC CO,CENT RES LABS,1753 NAKAHARA,KAWASAKI,JAPAN
SHIRAKI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(10)
: 1514
-
1523
[14]
STACKING-FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION
SHIRAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI,JAPAN
SHIRAKI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(01)
: 1
-
10
[15]
SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON
SUGITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
SUGITA, Y
SHIMIZU, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
SHIMIZU, H
YOSHINAKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
YOSHINAKA, A
AOSHIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
AOSHIMA, T
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977,
14
(01):
: 44
-
46
[16]
EFFECT OF CRYSTAL ORIENTATION ON STACKING FAULT FORMATION IN THERMALLY OXIDIZED SILICON
SUGITA, Y
论文数:
0
引用数:
0
h-index:
0
SUGITA, Y
KATO, T
论文数:
0
引用数:
0
h-index:
0
KATO, T
TAMURA, M
论文数:
0
引用数:
0
h-index:
0
TAMURA, M
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(13)
: 5847
-
&
[17]
NUCLEATION OF STACKING-FAULTS AT OXIDE PRECIPITATE-DISLOCATION COMPLEXES IN SILICON
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TAN, TY
WU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
WU, LL
TICE, WK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TICE, WK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(12)
: 765
-
767
[18]
VARKER CN, 1973, SEMICONDUCTOR SILICO, P670
←
1
2
→
共 18 条
[11]
ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ROZGONYI, GA
PETROFF, PM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, PM
READ, MH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
READ, MH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(12)
: 1725
-
1729
[12]
DISLOCATION ETCH FOR (100) PLANES IN SILICON
SECCODARAGONA, F
论文数:
0
引用数:
0
h-index:
0
SECCODARAGONA, F
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(07)
: 948
-
+
[13]
SILICON WAFER ANNEALING EFFECT IN LOOP DEFECT GENERATION
SHIRAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELEC CO,CENT RES LABS,1753 NAKAHARA,KAWASAKI,JAPAN
NIPPON ELEC CO,CENT RES LABS,1753 NAKAHARA,KAWASAKI,JAPAN
SHIRAKI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(10)
: 1514
-
1523
[14]
STACKING-FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION
SHIRAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI,JAPAN
SHIRAKI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(01)
: 1
-
10
[15]
SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON
SUGITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
SUGITA, Y
SHIMIZU, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
SHIMIZU, H
YOSHINAKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
YOSHINAKA, A
AOSHIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
AOSHIMA, T
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977,
14
(01):
: 44
-
46
[16]
EFFECT OF CRYSTAL ORIENTATION ON STACKING FAULT FORMATION IN THERMALLY OXIDIZED SILICON
SUGITA, Y
论文数:
0
引用数:
0
h-index:
0
SUGITA, Y
KATO, T
论文数:
0
引用数:
0
h-index:
0
KATO, T
TAMURA, M
论文数:
0
引用数:
0
h-index:
0
TAMURA, M
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(13)
: 5847
-
&
[17]
NUCLEATION OF STACKING-FAULTS AT OXIDE PRECIPITATE-DISLOCATION COMPLEXES IN SILICON
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TAN, TY
WU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
WU, LL
TICE, WK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TICE, WK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(12)
: 765
-
767
[18]
VARKER CN, 1973, SEMICONDUCTOR SILICO, P670
←
1
2
→