NUCLEATION OF STACKING-FAULTS AT OXIDE PRECIPITATE-DISLOCATION COMPLEXES IN SILICON

被引：25

作者：

TAN, TY ^{[1
]}

WU, LL ^{[1
]}

TICE, WK ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 12期

关键词：

D O I：

10.1063/1.88941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：765 / 767

页数：3

共 14 条

[1] FORMATION OF DIAMOND-SHAPED PRISMATIC LOOPS IN QUENCHED FCC METALS [J].

EIKUM, A ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3363-&

[2]

HIRSCH PB, 1963, NPL C RELATION STRUC, P440

[3] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION [J].

HSIEH, CM ;

MAHER, DM .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1302-1306

[4]

HU SM, 1974, J APPL PHYS, V45, P1568

[5] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J].

JOSHI, ML .

ACTA METALLURGICA, 1966, 14 (10) :1157-&

[6] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[7]

QUESSER HJ, 1964, J APPL PHYS, V35, P3066

[8] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

RAVI, KV ;

VARKER, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271

[9] DISSOCIATION OF DISLOCATIONS IN SILICON [J].

RAY, ILF ;

COCKAYNE, DJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 325 (1563) :543-&

[10] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS [J].

ROZGONYI, GA ;

KUSHNER, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :570-576

← 1 2 →