REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON

被引：16

作者：

KOYAMA, H ^{[1
]}

机构：

[1] VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSUKU,KAWASAKI 213,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3202 / 3205

页数：4

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共 10 条

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[2] HUFF HR, 1977, SEMICONDUCTOR SILICO, pCH10
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