IMPURITY SEGREGATION BY PULSED LASER IRRADIATION

被引：22

作者：

WHITE, CW

NARAYAN, J

APPLETON, BR

WILSON, SR

机构：

[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.326176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in profiles of implanted impurities in siliconand associated microstructural changes as a result of high-power laser pulses have been studied using ion- scattering channeling and transmission electron microscopy. The results show a significant segregation in the form of precipitates at and away from the dislocations in the near-surface regions for impurities such as copper and iron in silicon which have very low equilibrium solubilities and equilibrium distribution coefficients.

引用

页码：2967 / 2969

页数：3

共 17 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
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GOLOVCHENKO, JA
VENKATESAN, TNC
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[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8] PROPERTIES OF SI DIODES PREPARED BY ALLOYING AL INTO N-TYPE SI WITH HEAT PULSES FROM A ND-YAG LASER
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[9] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 338 - 340
[10] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON
NARAYAN, J
YOUNG, RT
WHITE, CW
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3912 - 3917

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