CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON

被引：224

作者：

YATSURUGI, Y

AKIYAMA, N

ENDO, Y

NOZAKI, T

机构：

[1] KOMATSU ELECTR MET CO, HIRATSUKA, JAPAN

[2] INST PHYS & CHEM RES, WAKO, SAITAMA, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 07期

关键词：

D O I：

10.1149/1.2403610

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：975 / 979

页数：5

相关论文

共 24 条

[1] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON
BAKER, JA
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &
[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS
BEAN, AR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1211 - &
[3] INFRARED SPECTROPHOTOMETRY FOR CARBON IN SILICON AS CALIBRATED BY CHARGED-PARTICLE ACTIVATION
ENDO, Y
AKIYAMA, N
NOZAKI, T
YATSURUG.Y
[J]. ANALYTICAL CHEMISTRY, 1972, 44 (14) : 2258 - &
[4] GRAFF K, TO BE PUBLISHED
[5] COMPARISON OF INFRARED AND ACTIVATION-ANALYSIS RESULTS IN DETERMINING OXYGEN AND CARBON CONTENT IN SILICON
GROSS, C
GAETANO, G
TUCKER, TN
BAKER, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 926 - &
[6] HORN FH, 1967, J ELECTROCHEM SOC, V114, P1307
[7] THE SOLUBILITY OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216
[8] NITROGEN IN SILICON
KAISER, W
THURMOND, CD
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 427 - 431
[9] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
KAISER, W
FRISCH, HL
REISS, H
[J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554
[10] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT
KAISER, W
BRESLIN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1292 - 1294