LOW-TEMPERATURE REDISTRIBUTION AND GETTERING OF OXYGEN IN SILICON

被引:13
作者
MAGEE, TJ [1 ]
LEUNG, C [1 ]
KAWAYOSHI, H [1 ]
FURMAN, B [1 ]
HOPKINS, CG [1 ]
EVANS, CA [1 ]
机构
[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402
关键词
D O I
10.1063/1.329403
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5392 / 5394
页数:3
相关论文
共 6 条
[1]  
LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484
[2]   GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI [J].
MAGEE, TJ ;
LEUNG, C ;
KAWAYOSHI, H .
APPLIED PHYSICS LETTERS, 1981, 38 (11) :891-893
[3]  
MAGEE TJ, 1979, PHYS STATUS SOLIDI A, V55, P161, DOI 10.1002/pssa.2210550117
[4]  
MORRISON GH, 1975, ANAL CHEM, V47, pA932, DOI 10.1021/ac60361a006
[5]  
SHEWMAN PG, 1971, DIFFUSION SOLIDS, pCH1
[6]  
1977, ANN BOOK ASTM STA 43, pF121