GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI - REPLY

被引：1

作者：

MAGEE, TJ ^{[1
]}

FURMAN, BK ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1227 / 1228

页数：2

相关论文

共 7 条

[1] REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON
KOYAMA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3202 - 3205
[2] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
ORMOND, R
FURMAN, BK
EVANS, CA
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 413 - 415
[3] REDISTRIBUTION OF OXYGEN WITHIN DAMAGE REGIONS OF BORON-IMPLANTED SILICON
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
FURMAN, B
EVANS, CA
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 260 - 262
[4] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 891 - 893
[5] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
PALKUTI, LJ
FURMAN, BK
EVANS, CA
CHRISTEL, LA
GIBBONS, JF
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 564 - 566
[6] MAGEE TJ, 1981, UNPUB
[7] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI - COMMENT
SCHAAKE, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1226 - 1226