RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI

被引：17

作者：

MAGEE, TJ

LEUNG, C

KAWAYOSHI, H

PALKUTI, LJ

FURMAN, BK

EVANS, CA

CHRISTEL, LA

GIBBONS, JF

DAY, DS

机构：

[1] CHARLES EVANS & ASSOC,SAN MATEO,CA 94402

[2] AVANTEK INC,SANTA CLARA,CA 95051

[3] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期

关键词：

D O I：

10.1063/1.92795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 566

页数：3

共 9 条

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182

[2]

CHRISTEL LA, 1980, JUL P C BEAM MOD MAT

[3] EFFECTS OF THE RECOIL-IMPLANTED OXYGEN IN SI ON THE ELECTRICAL ACTIVATION OF ARSENIC AFTER THROUGH-OXIDE IMPLANTATION [J].

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5251-5256

[4] LOW-TEMPERATURE REDISTRIBUTION AND GETTERING OF OXYGEN IN SILICON [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H ;

FURMAN, B ;

HOPKINS, CG ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5392-5394

[5] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H ;

ORMOND, R ;

FURMAN, BK ;

EVANS, CA ;

DAY, DS .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :413-415

[6] REDISTRIBUTION OF OXYGEN WITHIN DAMAGE REGIONS OF BORON-IMPLANTED SILICON [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H ;

FURMAN, B ;

EVANS, CA ;

DAY, DS .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :260-262

[7] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :891-893

[8]

MAGEE TJ, 1980, N00014800071 CONTR

[9]

MAGEE TJ, 1981, APPL PHYS LETT, V39, pR20

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