REDISTRIBUTION OF OXYGEN WITHIN DAMAGE REGIONS OF BORON-IMPLANTED SILICON

被引:15
作者
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
FURMAN, B
EVANS, CA
DAY, DS
机构
[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402
[2] AVANTEK INC,SANTA CLARA,CA 95051
关键词
D O I
10.1063/1.92665
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:260 / 262
页数:3
相关论文
共 6 条
  • [1] Bicknell R. W., 1970, Radiation Effects, V6, P45, DOI 10.1080/00337577008235044
  • [2] Chadderton L. T., 1971, Radiation Effects, V7, P129, DOI 10.1080/00337577108232573
  • [3] REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON
    KOYAMA, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3202 - 3205
  • [4] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 891 - 893
  • [5] MAGEE TJ, UNPUBLISHED
  • [6] 1977, ANN BOOK ASTM STA 43, pF121