A MODEL FOR THE EVOLUTION OF IMPLANTED OXYGEN PROFILES IN SILICON

被引：36

作者：

MAYDELLONDRUSZ, EA ^{[1
]}

WILSON, IH ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1016/0040-6090(84)90135-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 366

页数：10

共 20 条

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