Gate recessing of GaN MESFETs using photoelectrochemical wet etching

被引：13

作者：

Ping, AT ^{[1
]}

Selvanathan, D

Youtsey, C

Piner, E

Redwing, J

Adesida, I

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] ATMI Epitron, Phoenix, AZ 85027 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 24期

关键词：

D O I：

10.1049/el:19991341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.

引用

页码：2140 / 2141

页数：2

共 5 条

[1] Room-temperature photoenhanced wet etching of GaN [J].