Composite and multilayer ferroelectric thin films: processing, properties and applications

被引:58
作者
Jayadevan, KP [1 ]
Tseng, TY
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan
关键词
D O I
10.1023/A:1016129318548
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews recent developments in processing, properties and applications of composite and multilayer ferroelectric thin films. Methods such as physical vapor deposition, chemical vapor deposition and sol-gel, for the processing of composite and multilayer ferroelectric films are described. Among the techniques reviewed for the fabrication of multilayer ferroelectric films, molecular beam epitaxy and atomic layer metal-organic chemical vapor deposition are the most suitable techniques for the deposition of superlattices with atomically sharp interface. As an efficient and quick way, pulsed-laser deposition has been widely used for the preparation of ferroelectric multilayers and heterostructures. Superior dielectric properties have been reported for sol-gel-derived micrometer-thick ceramic/ceramic composite ferroelectric films. Properties of multilayer ferroelectric films vary as a function of periodicity, which can be exploited for the development of various electronic devices. Enhanced characteristics of composite and multilayer films with selected examples from recent literature and the origin of enhancement are discussed and summarized. Finally, applications of the materials for the development of various electronic devices are also presented. (C) 2002 Kluwer Academic Publishers.
引用
收藏
页码:439 / 459
页数:21
相关论文
共 186 条
[1]  
ABDELGHAFAR KK, 1997, JPN J APPL PHYS PT 2, V36, pL1032
[2]   Asymmetric ferroelectricity and anomalous current conduction in heteroepitaxial BaTiO3 thin films [J].
Abe, K ;
Komatsu, S ;
Yanase, N ;
Sano, K ;
Kawakubo, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :5846-5853
[3]   Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures [J].
Aggarwal, S ;
Perusse, SR ;
Madhukar, S ;
Song, TK ;
Canedy, CL ;
Ramesh, R ;
Choopun, S ;
Sharma, RP ;
Venkatesan, T ;
Green, SM .
JOURNAL OF ELECTROCERAMICS, 1998, 2 (03) :171-179
[4]   FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES [J].
AHN, CH ;
TRISCONE, JM ;
ARCHIBALD, N ;
DECROUX, M ;
HAMMOND, RH ;
GEBALLE, TH ;
FISCHER, O ;
BEASLEY, MR .
SCIENCE, 1995, 269 (5222) :373-376
[5]   Low temperature processing of Nb-doped Pb(Zr,Ti)O-3 capacitors with La0.5Sr0.5CoO3 electrodes [J].
AlShareef, HN ;
Tuttle, BA ;
Warren, WL ;
Dimos, D ;
Raymond, MV ;
Rodriguez, MA .
APPLIED PHYSICS LETTERS, 1996, 68 (02) :272-274
[6]   The effects of La and Nb modification on fatigue and retention properties of Pb(Ti, Zr)O-3 thin-film capacitors [J].
Aoki, K ;
Fukuda, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1195-L1197
[7]   Processing technologies for ferroelectric thin films and heterostructures [J].
Auciello, O ;
Foster, CM ;
Ramesh, R .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :501-531
[8]  
AURIVILLIUS B, 1950, ARK KEMI, V1, P463
[9]  
Baliga J., 1999, Semiconductor International, V22, P79
[10]  
BARROW D, 1992, MATER RES SOC S P, V243, P113