Composite and multilayer ferroelectric thin films: processing, properties and applications

被引:58
作者
Jayadevan, KP [1 ]
Tseng, TY
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan
关键词
D O I
10.1023/A:1016129318548
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews recent developments in processing, properties and applications of composite and multilayer ferroelectric thin films. Methods such as physical vapor deposition, chemical vapor deposition and sol-gel, for the processing of composite and multilayer ferroelectric films are described. Among the techniques reviewed for the fabrication of multilayer ferroelectric films, molecular beam epitaxy and atomic layer metal-organic chemical vapor deposition are the most suitable techniques for the deposition of superlattices with atomically sharp interface. As an efficient and quick way, pulsed-laser deposition has been widely used for the preparation of ferroelectric multilayers and heterostructures. Superior dielectric properties have been reported for sol-gel-derived micrometer-thick ceramic/ceramic composite ferroelectric films. Properties of multilayer ferroelectric films vary as a function of periodicity, which can be exploited for the development of various electronic devices. Enhanced characteristics of composite and multilayer films with selected examples from recent literature and the origin of enhancement are discussed and summarized. Finally, applications of the materials for the development of various electronic devices are also presented. (C) 2002 Kluwer Academic Publishers.
引用
收藏
页码:439 / 459
页数:21
相关论文
共 186 条
[21]  
Broadbent S. R, 1957, P CAMBRIDGE PHIL SOC, V53, P629, DOI DOI 10.1017/S0305004100032680
[22]  
CAMMARATA RC, 1998, NANOMATERIALS SYNTHE, P113
[23]   Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters [J].
Carlson, CM ;
Rivkin, TV ;
Parilla, PA ;
Perkins, JD ;
Ginley, DS ;
Kozyrev, AB ;
Oshadchy, VN ;
Pavlov, AS .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1920-1922
[24]   ENHANCEMENT OF THE DIELECTRIC-CONSTANT OF TA2O5 THROUGH SUBSTITUTION WITH TIO2 [J].
CAVA, RF ;
PECK, WF ;
KRAJEWSKI, JJ .
NATURE, 1995, 377 (6546) :215-217
[25]   Effects of oxygen-argon mixing on the electrical and physical properties of ZrTiO4 films sputtered on silicon at low temperature [J].
Chang, DA ;
Lin, P ;
Tseng, TY .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :7103-7108
[26]   Single and multilayer ferroelectric PbZrxTi1-xO3 (PZT) on BaTiO3 [J].
Chang, LH ;
Anderson, WA .
THIN SOLID FILMS, 1997, 303 (1-2) :94-100
[27]   Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films [J].
Chang, WT ;
Gilmore, CM ;
Kim, WJ ;
Pond, JM ;
Kirchoefer, SW ;
Qadri, SB ;
Chirsey, DB ;
Horwitz, JS .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :3044-3049
[28]   Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films [J].
Chattopadhyay, S ;
Kvit, A ;
Kumar, D ;
Sharma, AK ;
Sankar, J ;
Narayan, J ;
Knight, VS ;
Coleman, TS ;
Lee, CB .
APPLIED PHYSICS LETTERS, 2001, 78 (22) :3514-3516
[29]   ELECTRICAL-PROPERTIES MAXIMA IN THIN-FILMS OF THE LEAD ZIRCONATE LEAD TITANATE SOLID-SOLUTION SYSTEM [J].
CHEN, HD ;
UDAYAKUMAR, KR ;
GASKEY, CJ ;
CROSS, LE .
APPLIED PHYSICS LETTERS, 1995, 67 (23) :3411-3413
[30]   Ferroelectricity in sol-gel derived Ba0.8Sr0.2TiO3 thin films using a highly diluted precursor solution [J].
Cheng, JG ;
Meng, XJ ;
Li, B ;
Tang, J ;
Guo, SL ;
Chu, JH ;
Wang, M ;
Wang, H ;
Wang, Z .
APPLIED PHYSICS LETTERS, 1999, 75 (14) :2132-2134