Materials optimization for thin film transistors fabricated at low temperature on plastic substrate

被引:43
作者
Sazonov, A
Nathan, A [1 ]
Striakhilev, D
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
[2] Yaroslavl State Univ, Dept Phys, Yaroslavl 150000, Russia
关键词
D O I
10.1016/S0022-3093(99)00946-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, we describe the optimization of the electronic properties and the mechanical stress in the amorphous hydrogenated silicon (a-Si:H) and amorphous silicon nitride (a-SiNx:H) layers. The goal is to obtain smaller defect density and smaller mechanical stress materials that provide low-leakage current and to prevent the peeling of the multilayer structure off the substrate. The developed fabrication process used a 90% H-2 + 10% SiH4 Source gas mixture for the deposition of a-Si:H and He-diluted 2.5% SiH4 + 97.5% (NH3 + N-2) gas mixture for the deposition of a-SiNx:H at a substrate temperature of 120 degrees C, The properties of the deposited film samples were measured by infrared spectroscopy, constant photocurrent method (CPM). and electron spin resonance. Optimized a-Si:H films have 11 at.% of predominantly monohydride-bonded hydrogen, CPM defect density about 4 x 10(16) cm(-3), and an Urbach energy of a 53 meV. In the a-SiNx:H films, He dilution results in the removal of hydrogen from SiH bonds, and in the increase of him density assisted by mechanical stress transition from tensile to compressive, while maintaining a low deep defect density. (C) 2000 Elsevier Science B.V. All rights reserved.
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收藏
页码:1329 / 1334
页数:6
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