Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

被引:14
作者
Bouyanfif, H. [1 ]
Wolfman, J. [1 ]
El Marssi, M. [2 ]
Yuzyuk, Y. [2 ]
Bodeux, R. [1 ,3 ]
Gervais, M. [1 ]
Gervais, F. [1 ]
机构
[1] Univ Tours, Lab LEMA, CNRS, CEA,UMR 6157, F-37200 Tours, France
[2] Univ Picardie, Phys Mat Condensee Lab, F-80039 Amiens, France
[3] STMicroelectronics, R&D, F-37000 Tours, France
关键词
barium compounds; dielectric thin films; elasticity; epitaxial layers; internal stresses; microwave materials; phonons; pulsed laser deposition; Raman spectra; soft modes; stoichiometry; strontium compounds; vapour phase epitaxial growth; X-ray chemical analysis; X-ray diffraction; SRTIO3;
D O I
10.1063/1.3190478
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the investigation of the (Ba,Sr)TiO3 (BST) system of technological importance for microwave applications. The development of the combinatorial method enabled us to grow and study a library of samples ranging from BaTiO3 to SrTiO3 (ST) deposited on MgO substrate. The spatial control of the stoichiometry and of the structure has been evidenced and probed using energy dispersive x-ray spectroscopy, high resolution x-ray diffraction, and Raman spectroscopy. A global and coherent picture emerged from the complex interplay between the epitaxial/thermal stress and stoichiometry changes. Taking into account elastic interactions with the substrate we present subtle symmetry changes in the BST library in comparison with the bulk phase diagram such as tetragonal distortion observed on the ST side. Finally underdamped soft mode hardening and polar modes are detected on the high barium and strontium compositions, respectively, highlighting fundamental dynamical/structural differences with their bulk counterparts.
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页数:4
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