Fundamentals of SiC-based device processing

[1] [Anonymous], 1965, J APPL PHYSL

[2] Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107

[3] BROWN DM, 1994, T 2 INT HIGH TEMP EL, P11

[4] Burk A.A., 1994, I PHYSICS C SERIES, V137, P29

[5] CONTACT RESISTANCE MEASUREMENTS ON P-TYPE 6H-SIC [J]. APPLIED PHYSICS LETTERS, 1993, 62 (04) : 384 - 386

[6] HIGH-TEMPERATURE OHMIC CONTACT TO N-TYPE 6H-SIC USING NICKEL [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1317 - 1319

[7] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J]. PROCEEDINGS OF THE IEEE, 1991, 79 (05) : 677 - 701

[8] DIOGU KK, 1996, 54 DEV RES C U CALIF

[9] NITROGEN-IMPLANTED SIC DIODES USING HIGH-TEMPERATURE IMPLANTATION [J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 639 - 641

[10] BORON-IMPLANTED 6H-SIC DIODES [J]. APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1206 - 1208

[1] [Anonymous], 1965, J APPL PHYSL

[2] Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107

[3] BROWN DM, 1994, T 2 INT HIGH TEMP EL, P11

[4] Burk A.A., 1994, I PHYSICS C SERIES, V137, P29

[5] CONTACT RESISTANCE MEASUREMENTS ON P-TYPE 6H-SIC [J]. APPLIED PHYSICS LETTERS, 1993, 62 (04) : 384 - 386

[6] HIGH-TEMPERATURE OHMIC CONTACT TO N-TYPE 6H-SIC USING NICKEL [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1317 - 1319

[7] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J]. PROCEEDINGS OF THE IEEE, 1991, 79 (05) : 677 - 701

[8] DIOGU KK, 1996, 54 DEV RES C U CALIF

[9] NITROGEN-IMPLANTED SIC DIODES USING HIGH-TEMPERATURE IMPLANTATION [J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 639 - 641

[10] BORON-IMPLANTED 6H-SIC DIODES [J]. APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1206 - 1208