Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip

被引:21
作者
Regul, J [1 ]
Keyser, UF
Paesler, M
Hohls, F
Zeitler, U
Haug, RJ
Malavé, A
Oesterschulze, E
Reuter, D
Wieck, AD
机构
[1] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Univ Kassel, Inst Tech Phys, D-34132 Kassel, Germany
[3] Ruhr Univ Bochum, Lehrstuhl Angew Phys, D-44780 Bochum, Germany
关键词
D O I
10.1063/1.1506417
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements. (C) 2002 American Institute of Physics.
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页码:2023 / 2025
页数:3
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