Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

被引:49
作者
Hyon, CK
Choi, SC
Song, SH
Hwang, SW [1 ]
Son, MH
Ahn, D
Park, YJ
Kim, EK
机构
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[2] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea
[3] Korea Inst Sci & Technol, Semicond Mat Res Lab, Seoul 130650, South Korea
关键词
D O I
10.1063/1.1318393
中图分类号
O59 [应用物理学];
学科分类号
摘要
The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns. (C) 2000 American Institute of Physics. [S0003-6951(00)01642-9].
引用
收藏
页码:2607 / 2609
页数:3
相关论文
共 17 条
  • [1] Bimberg D., 1999, QUANTUM DOT HETEROST
  • [2] Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope
    Hyon, CK
    Choi, SC
    Hwang, SW
    Ahn, D
    Kim, Y
    Kim, EK
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (02) : 292 - 294
  • [3] Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope
    Hyon, CK
    Choi, SC
    Hwang, SW
    Ahn, D
    Kim, Y
    Kim, EK
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 7257 - 7259
  • [4] Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy
    Ishikawa, T
    Kohmoto, S
    Asakawa, K
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (12) : 1712 - 1714
  • [5] Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
    Ishikawa, T
    Nishimura, T
    Kohmoto, S
    Asakawa, K
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (02) : 167 - 169
  • [6] Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
    Jeppesen, S
    Miller, MS
    Hessman, D
    Kowalski, B
    Maximov, I
    Samuelson, L
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2228 - 2230
  • [7] Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale
    Kasu, M
    Makimoto, T
    Kobayashi, N
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1161 - 1163
  • [8] IN-SITU FABRICATION OF SELF-ALIGNED INGAAS QUANTUM DOTS ON GAAS MULTIATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KITAMURA, M
    NISHIOKA, M
    OSHINOWO, J
    ARAKAWA, Y
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (26) : 3663 - 3665
  • [9] Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
    Kohmoto, S
    Nakamura, H
    Ishikawa, T
    Asakawa, K
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3488 - 3490
  • [10] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS
    LEONARD, D
    POND, K
    PETROFF, PM
    [J]. PHYSICAL REVIEW B, 1994, 50 (16): : 11687 - 11692