Electronic and optical properties of ZnIn2Te4

被引:28
作者
Ganguli, B
Saha, KK
Saha-Dasgupta, T
Mookerjee, A
Bhattacharya, AK
机构
[1] SN Bose Natl Ctr Basic Sci, Kolkata, W Bengal, India
[2] Univ Warwick, Dept Engn, Ctr Catalysis & Mat Design, Coventry, W Midlands, England
关键词
chalcopyrite; semiconductors; nanoparticles; optical properties;
D O I
10.1016/j.physb.2004.01.004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Band structure and optical properties of defect-chalcopyrite-type semiconductor ZnIn2Te4 have been studied by TB-LMTO first-principle technique. The band structure calculation suggests that ZnIn2Te4 is a direct-gap semiconductor having a band gap of 1.37 eV., which is very close to the experimentally measured value, 1.40 eV. The calculated optical response functions confirm the experimentally measured values. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:382 / 390
页数:9
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