γ-ray-induced bleaching in silica:: Conversion from optical to paramagnetic defects

被引:35
作者
Agnello, S
Boscaino, R
Cannas, M
Gelardi, FM
Leone, M
机构
[1] INFM, I-90123 Palermo, Italy
[2] Univ Palermo, Dept Phys & Astron Sci, I-90123 Palermo, Italy
关键词
D O I
10.1103/PhysRevB.61.1946
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report experimental results on optical and ESR measurements performed in gamma-irradiated natural silica samples having different content of OH groups. A partial bleaching of the optical absorption band B-2 beta at 5.15 eV and the related photoluminescence emissions at 3.1 eV and 4.2 eV is observed together with the growth of an ESR doublet split by 11.8 mT. The kinetics of the two processes as a function of the gamma dose are correlated and depend on the OH content. Our experiments indicate the occurrence of a gamma-ray-induced conversion, from optically active centers to paramagnetic ones and vice versa, changing the relative concentration of the two defects until a steady state is reached. A conversion model is proposed in which gamma-ray-activated H atoms either are trapped in optically active defects, giving rise to paramagnetic ones, or interact with the last ones, restoring the original optical centers. Our results are consistent with a structural model in which the optical active center is a twofold coordinated Ge and the 11.8 mT doublet originates from a O=Ge-H center.
引用
收藏
页码:1946 / 1951
页数:6
相关论文
共 28 条
[1]   Gamma ray induced 11.8 mT ESR doublet in natural silica [J].
Agnello, S ;
Boscaino, R ;
Cannas, M ;
Gelardi, FM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 232 :323-328
[2]   OPTICAL-PROPERTIES OF OXYGEN-DEFICIENT CENTERS IN SILICA GLASSES FABRICATED IN H2 OR VACUUM AMBIENT [J].
AWAZU, K ;
KAWAZOE, H ;
MUTA, K .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :69-74
[3]   ESR and PL centers induced by gamma rays in silica [J].
Boscaino, R ;
Cannas, M ;
Gelardi, FM ;
Leone, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 116 (1-4) :373-377
[4]   Photoinduced conversion of optically active defects in germanium-doped silica [J].
Crivelli, B ;
Martini, M ;
Meinardi, F ;
Paleari, A ;
Spinolo, G .
PHYSICAL REVIEW B, 1996, 54 (23) :16637-16640
[5]   Difference in the behavior of oxygen deficient defects in Ge-doped silica optical fiber preforms under ArF and KrF excimer laser irradiation [J].
Essid, M ;
Brebner, JL ;
Albert, J ;
Awazu, K .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4193-4197
[6]   Ion implantation induced photosensitivity in Ge-doped silica: Effect of induced defects on refractive index changes [J].
Essid, M ;
Brebner, JL ;
Albert, J ;
Awazu, K .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 141 (1-4) :616-619
[7]   Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser [J].
Fujimaki, M ;
Yagi, K ;
Ohki, Y ;
Nishikawa, H ;
Awazu, K .
PHYSICAL REVIEW B, 1996, 53 (15) :9859-9862
[8]   Structures and generation mechanisms of paramagnetic centers and absorption bands responsible for Ge-doped SiO2 optical-fiber gratings [J].
Fujimaki, M ;
Watanabe, T ;
Katoh, T ;
Kasahara, T ;
Miyazaki, N ;
Ohki, Y ;
Nishikawa, H .
PHYSICAL REVIEW B, 1998, 57 (07) :3920-3926
[9]  
HETHERINGTON G, 1965, PHYS CHEM GLASSES, V6, P6
[10]   NATURE AND ORIGIN OF THE 5-EV BAND IN SIO2-GEO2 GLASSES [J].
HOSONO, H ;
ABE, Y ;
KINSER, DL ;
WEEKS, RA ;
MUTA, K ;
KAWAZOE, H .
PHYSICAL REVIEW B, 1992, 46 (18) :11445-11451